• DocumentCode
    1042558
  • Title

    Current-voltage characteristics of small size MOS transistors

  • Author

    Hoeneisen, B. ; Mead, C.A.

  • Author_Institution
    California Institute of Technology, Pasadena, Calif.
  • Volume
    19
  • Issue
    3
  • fYear
    1972
  • fDate
    3/1/1972 12:00:00 AM
  • Firstpage
    382
  • Lastpage
    383
  • Abstract
    One-dimensional analysis is used to find an upper and lower bound to the drain current of MOS transistors. The drain and source depletion regions and charge carrier velocity saturation are taken into account. These considerations are important in small devices.
  • Keywords
    Boundary conditions; Channel bank filters; Charge carriers; Current-voltage characteristics; MOSFETs; Permittivity; Silicon; Space charge; TV; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1972.17428
  • Filename
    1476899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1042558