Title :
A new silicon vidicon with a CdTe—Si target
Author :
Yamato, T. ; Yoshikawa, S. ; Kobayashi, K. ; Matsuzaki, J. ; Tagoshima, I.
Author_Institution :
NHK Technical Research Laboratories, Tokyo, Japan
fDate :
3/1/1972 12:00:00 AM
Abstract :
A new type of a silicon vidicon target which utilizes blocking contacts between bulk semiconductor and a high resistive layer has been developed. The high resistive layer forms a blocking contact to the bulk and works also as a "resistive sea" layer, reducing complex fabrication processes. Structure of the target, tube characteristics, and video patterns are presented.
Keywords :
Cameras; Capacitance; Heterojunctions; Insulation; Multimedia communication; P-n junctions; Semiconductor diodes; Semiconductor materials; Silicon; TV broadcasting;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17430