DocumentCode :
1042577
Title :
A new silicon vidicon with a CdTe—Si target
Author :
Yamato, T. ; Yoshikawa, S. ; Kobayashi, K. ; Matsuzaki, J. ; Tagoshima, I.
Author_Institution :
NHK Technical Research Laboratories, Tokyo, Japan
Volume :
19
Issue :
3
fYear :
1972
fDate :
3/1/1972 12:00:00 AM
Firstpage :
385
Lastpage :
386
Abstract :
A new type of a silicon vidicon target which utilizes blocking contacts between bulk semiconductor and a high resistive layer has been developed. The high resistive layer forms a blocking contact to the bulk and works also as a "resistive sea" layer, reducing complex fabrication processes. Structure of the target, tube characteristics, and video patterns are presented.
Keywords :
Cameras; Capacitance; Heterojunctions; Insulation; Multimedia communication; P-n junctions; Semiconductor diodes; Semiconductor materials; Silicon; TV broadcasting;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17430
Filename :
1476901
Link To Document :
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