Microscopic Origins of Catastrophic Optical Damage in Diode Lasers

Author

Hempel, Michael ; Tomm, Jens W. ; La Mattina, F. ; Ratschinski, I. ; Schade, M. ; Shorubalko, I. ; Stiefel, M. ; Leipner, Hartmut S. ; Kiessling, Frank M. ; Elsaesser, Thomas

Author_Institution

Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany

Volume

19

Issue

4

fYear

2013

fDate

July-Aug. 2013

Firstpage

1500508

Lastpage

1500508

Abstract

Extremely early phases of the catastrophic optical damage (COD) process in 808-nm emitting GaAs/Al_0.35Ga_0.65 As high-power diode lasers are prepared by the application of short single current pulses. Typical energy entries during these pulses are on the order of 100 nJ within several 100 ns. The resulting defect pattern is investigated by high-resolution microscopy. The root of the COD is found to be located at the waveguide of the laser structure. Analysis of material composition modifications as a result of early COD phase points to melting being involved in the process. During recrystallization, an Al-rich pattern is formed that encloses a volume of a few cube micron of severely damaged material.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; melting; optical microscopy; recrystallisation; semiconductor lasers; waveguide lasers; GaAs-Al_0.35Ga_0.65As; catastrophic optical damage; defect pattern; early COD phase points; energy 100 nJ; energy entries; high-power diode lasers; high-resolution microscopy; material composition modifications; melting; recrystallization; short single current pulses; waveguide laser structure; wavelength 808 nm; Heating; Ignition; Materials; Optical pulses; Optical waveguides; Scanning electron microscopy; Semiconductor device measurements; semiconductor diodes; semiconductor lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2012.2236303

Filename

6392846