• DocumentCode
    1042687
  • Title

    Gain in electrophotography—II: Charge transfer configuration

  • Author

    Melz, Peter J. ; Vahtra, Ulo

  • Author_Institution
    IBM Corporation, San Jose, Calif.
  • Volume
    19
  • Issue
    4
  • fYear
    1972
  • fDate
    4/1/1972 12:00:00 AM
  • Firstpage
    437
  • Lastpage
    447
  • Abstract
    The potential of the charge transfer imaging process for producing gain is considered under dynamic exposure conditions. A photoconductor with an ohmic or injecting contact to ground is assumed to be in virtual contact with a dielectric layer. The dielectric collects the charge transferred from the photoconductor under the influence of simultaneous exposure and application of high voltage. From simple arguments it can be demonstrated that the duration of the high voltage pulse is critical in optimizing the gain in the charge contrast. The qualitative results of the simple arguments are supported by detailed numerical calculations which demonstrate that a maximum gain of C_{ext}/2eC_{pc}\\simeq 0.184 C_{ext}/C_{pc} can be developed at a time approximately equal to (C_{ext}+C_{pc})/C_{pc} times the carrier transit time of the photoconductor. The results of the calculations are supported by experiments.
  • Keywords
    Capacitance; Charge carrier lifetime; Charge transfer; Conductors; Dielectrics; Electrostatics; Helium; Photoconductivity; Steady-state; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1972.17441
  • Filename
    1476912