DocumentCode :
1042726
Title :
Dye-sensitization mechanism of zinc oxide thin layers
Author :
Inoue, Eiichi ; Kokado, Hiroshi ; Nakayama, Takao
Author_Institution :
Tokyo Institute of Technology, Tokyo, Japan
Volume :
19
Issue :
4
fYear :
1972
fDate :
4/1/1972 12:00:00 AM
Firstpage :
471
Lastpage :
474
Abstract :
Thin layers of zinc oxide, prepared by oxidizing zinc selenide were used to examine a previously proposed model for the spectral sensitization of photoconduction. When the sensitizing dyes were adsorbed in low densities, the chemical interactions between the dyes and zinc oxide seemed to repopulate the surface-trapped electrons and the population determined the sensitizing efficiency. When dyes were densely adsorbed, however, the trapping effect by dye molecules appeared to be large enough to smear the primary chemical interactions with zinc oxide. In dyes of a similar chemical structure, the sensitizing efficiency was related to the saturation value for dye adsorption. The light intensity dependence of photocurrent was observed to be varied by the adsorption density of dyes, reflecting the influence of trapping.
Keywords :
Chemicals; Conductivity; Density functional theory; Electron traps; Electrophotography; Energy states; Helium; Photoconductivity; Zinc compounds; Zinc oxide;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17445
Filename :
1476916
Link To Document :
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