• DocumentCode
    104286
  • Title

    Silicon tunneling field-effect transistors with tunneling in line with the gate field

  • Author

    Fischer, Inga Anita ; Bakibillah, A.S.M. ; Golve, Murali ; Hahnel, Daniel ; Isemann, H. ; Kottantharayil, Anil ; Oehme, Michael ; Schulze, J.

  • Author_Institution
    Inst. for Semicond. Eng., Univ. of Stuttgart, Stuttgart, Germany
  • Volume
    34
  • Issue
    2
  • fYear
    2013
  • fDate
    Feb. 2013
  • Firstpage
    154
  • Lastpage
    156
  • Abstract
    We present experimental results on the fabrication and characterization of vertical Si tunneling field-effect transistors (TFETs) in a device geometry with tunneling in line with the gate field. Compared to vertical Si TFETs without this geometry modification, on-currents are increased by more than one order of magnitude with ION = 1.1 μA/μm at VDS = 0.5 V and an ION/IOFF ratio of 3.4 ·104 in n-channel operation. We present further suggestions for device improvements.
  • Keywords
    elemental semiconductors; field effect transistors; silicon; tunnelling; Si; TFET; gate field; geometry modification; n-channel operation; silicon tunneling field-effect transistors; voltage 0.5 V; Geometry; Logic gates; Performance evaluation; Silicon; Transistors; Tunneling; Semiconductor devices; transistors; tunneling; tunneling field-effect transistor (TFET);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2228250
  • Filename
    6392851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=104286