The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs

Author

Verzellesi, G. ; Cavallini, A. ; Basile, A.F. ; Castaldini, A. ; Canali, C.

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Univ. di Modena e Reggio Emilia, Italy

Volume

25

Issue

8

fYear

2004

Firstpage

517

Lastpage

519

Abstract

Gate-lag transients and "hole-like" deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.

Keywords

III-V semiconductors; aluminium compounds; deep level transient spectroscopy; gallium arsenide; hole traps; power field effect transistors; semiconductor device models; surface states; transient response; 2D numerical device simulations; AlGaAs bandgap; AlGaAs-GaAs; HFET; charge carrier processes; current DLTS; gate-lag transients; heterostructure field-effect transistors; hole-like deep level transient spectroscopy signals; hole-trap behavior; light impact; light intensity; microwave power FET; photon illumination; pulse-response dependence; surface deep levels; transient response; Aluminum gallium nitride; FETs; Gallium nitride; HEMTs; Irrigation; Lighting; MODFETs; Numerical simulation; Photonic band gap; Spectroscopy; Aluminum compounds; charge carrier processes; gallium compounds; microwave power FETs; transient response;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.831965

Filename

1317011