Author :
He, Gang ; Howard, James ; Le, Minh ; Partyka, Paul ; Li, Bin ; Kim, Grant ; Hess, Ronald ; Bryie, Randy ; Lee, Rainier ; Rustomji, Sam ; Pepper, Jeff ; Kail, Marty ; Helix, Max ; Elder, Richard B. ; Jansen, Douglas S. ; Harff, Nathan E. ; Prairie, Jason
Author_Institution :
Vitesse Semicond. Corp., Camarillo, CA, USA
Abstract :
We report self-aligned indium-phosphide double-heterojunction bipolar transistor devices in a new manufacturable technology with both cutoff frequency (fτ) and maximum oscillation frequency (fmax) over 300 GHz and open-base breakdown voltage (BVceo) over 4 V. Logic circuits fabricated using these devices in a production integrated-circuit process achieved a current-mode logic ring-oscillator gate delay of 1.95 ps and an emitter-coupled logic static-divider frequency of 152 GHz, both of which closely matched model-based circuit simulations.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; logic circuits; semiconductor device manufacture; semiconductor device models; 1.95 ps; 152 GHz; 300 GHz; 4 V; InP; current-mode logic ring-oscillator gate delay; cutoff frequency; emitter-coupled logic static-divider frequency; highspeed integrated circuits; logic circuits fabrication; manufacturable technology; maximum oscillation frequency; model-based circuit simulations; open-base breakdown voltage; production integrated-circuit process; self-aligned InP DHBT; self-aligned indium-phosphide double-heterojunction bipolar transistor devices; Bipolar transistors; Cutoff frequency; DH-HEMTs; Indium phosphide; Integrated circuit manufacture; Integrated circuit technology; Logic circuits; Logic devices; Manufacturing processes; Virtual manufacturing; HBT; Heterojunction bipolar transistor; InP; high-speed integrated circuits; indium phosphide;
