Title :
Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise
Author :
Bo Chin Wang ; San Lein Wu ; Yu Ying Lu ; Shoou Jinn Chang ; Jone Fang Chen ; Shih Chang Tsai ; Che Hua Hsu ; Chih Wei Yang ; Cheng Guo Chen ; Cheng, Osbert ; Po Chin Huang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Low-frequency (1/f) noise characteristics of 28-nm nMOSFETs with ZrO2/SiO2 and HfO2/SiO2 dielectric gate stacks have been investigated. The observed lower 1/f noise level in ZrO2 devices, as compared with that in HfO2 devices, is attributed to the reduction in tunneling attenuation length and in trap density simultaneously. Experimental results showed that the trap behavior of ZrO2/SiO2 dielectric gate stack changes not only the trap location from a high-k layer to a SiO2 interfacial layer but also the noise-dominated mechanism from carrier number fluctuation to the unified fluctuation model, which includes number fluctuation and correlated mobility fluctuation.
Keywords :
1/f noise; MOSFET; carrier mobility; hafnium compounds; semiconductor device noise; silicon compounds; zirconium compounds; 1/f noise; HfO2-SiO2; ZrO2-SiO2; carrier number fluctuation; correlated mobility fluctuation; gate stack nMOSFET; noise-dominated mechanism; random telegraph noise; size 28 nm; trap behavior; trap density; tunneling attenuation length; unified fluctuation model; Dielectrics; Hafnium compounds; Logic gates; MOSFETs; Noise; Silicon; Carrier number fluctuation; low-frequency $(hbox{1}/f)$ noise characteristics; random telegraph noise (RTN);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2226698
