• DocumentCode
    1043158
  • Title

    The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental

  • Author

    Conradi, Jan

  • Author_Institution
    RCA Ltd., Ste. Annede-Bellevue, P. Q., Canada,
  • Volume
    19
  • Issue
    6
  • fYear
    1972
  • fDate
    6/1/1972 12:00:00 AM
  • Firstpage
    713
  • Lastpage
    718
  • Abstract
    Experimental measurements of the gain distribution and noise spectral density of silicon avalanche photodiodes are presented and compared with McIntyre´s theories [7], [8]. Excellent agreement is obtained using keff, the effective ratio of the hole and electron ionization coefficients, as the only adjustable parameter.
  • Keywords
    Avalanche photodiodes; Charge carrier processes; Density measurement; Fluctuations; Gain measurement; Ionization; Noise measurement; P-i-n diodes; Signal to noise ratio; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1972.17486
  • Filename
    1476957
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1043158