High-Performance $\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}$ -Channel MOSFETs With High- $\kappa$

Long and short buried-channel In_0.7Ga_0.3As MOSFETs with and without alpha-Si passivation are demonstrated. Devices with alpha-Si passivation show much higher transconductance and an effective peak mobility of 3810 cm²/ V middots. Short-channel MOSFETs with a gate length of 160 nm display a current of 825 muA/mum at Vg - Vt = 1.6 V and peak transconductance of 715 muS/mum. In addition, the virtual source velocity extracted from the short-channel devices is 1.4-1.7 times higher than that of Si MOSFETs. These results indicate that the high-performance In_0.7Ga_0.3 As-channel MOSFETs passivated by an alpha -Si layer are promising candidates for advanced post-Si CMOS applications.