Title :
Improvement of FinFET electrical characteristics by hydrogen annealing
Author :
Xiong, Weize ; Gebara, Gabriel ; Zaman, Joyti ; Gostkowski, Michael ; Nguyen, Billy ; Smith, Greg ; Lewis, David ; Cleavelin, C. Rinn ; Wise, Rick ; Yu, Shaofeng ; Pas, Michael ; King, Tsu-Jae ; Colinge, J.P.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Hydrogen anneal is used during FinFET processing to round off the corners of the silicon fins prior to gate oxidation and to smooth the surface of the fin sidewalls. This procedure greatly improves gate leakage and, in addition, reduces the width of the fins, resulting in a lower threshold voltage and improved drain-induced barrier lowering (DIBL) characteristics. Reduction of the leakage current by up to four orders of magnitude is obtained after edge rounding by hydrogen annealing. In addition, a 50% decrease of DIBL is observed, due to fin width reduction.
Keywords :
MOSFET; annealing; insulated gate field effect transistors; leakage currents; oxidation; silicon-on-insulator; DIBL characteristics; FinFET electrical characteristics; FinFET processing; H; MOS devices; SOI technology; Si; drain-induced barrier lowering; edge rounding; fin sidewalls; fin width reduction; gate leakage; gate oxidation; hydrogen annealing; insulated gate FET; leakage current; silicon fins; silicon-on-insulator; surface smoothing; threshold voltage; Annealing; Electric variables; Etching; FinFETs; Hafnium; Hydrogen; Leakage current; MOSFETs; Oxidation; Silicon on insulator technology; Insulated gate FETs; MOS devices; SOI; silicon-on-insulator; technology;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.832787
