Dual Gate ZnO-Based Thin-Film Transistors Operating at 5 V: nor Gate Application

Author

Park, C.H. ; Lee, Kwang H. ; Oh, Min Suk ; Lee, Kimoon ; Im, Seongil ; Lee, Byoung H. ; Sung, Myung M.

Author_Institution

Inst. of Phys. & Appl. Phys., Yonsei Univ., Seoul

Volume

30

Issue

1

fYear

2009

Firstpage

30

Lastpage

32

Abstract

We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick Al₂O₃ for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 ^degC. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm²/V middots, a high saturation current of 6 muA, and an on/off current ratio of ~ 10⁶, while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, nor gate operation was well demonstrated.

Keywords

II-VI semiconductors; logic gates; thin film transistors; wide band gap semiconductors; zinc compounds; NOR gate operation; ZnO; atomic layer deposition; dielectrics; dual gate transistors; field mobility; glass substrates; on/off current ratio; saturation current; size 20 nm; temperature 200 degC; thin-film transistors; voltage 5 V; Dual gate (DG); NOR logic gate; ZnO; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2007973

Filename

4721617