Title :
Analysis of a 100-GHz double-drift IMPATT oscillator
Author :
Evans, William J.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
fDate :
6/1/1972 12:00:00 AM
Abstract :
The purpose of this paper is to analyze and characterize in some detail a 100-GHz double-drift IMPATT oscillator. The small-signal and large-signal behavior of the diode has been analyzed using a semiconductor-analysis computer program. It is suggested that previously reported experimental results have been achieved with the aid of second-harmonic tuning and that 150-GHz single-frequency operation is possible with the present diode structure.
Keywords :
Capacitance measurement; Capacitance-voltage characteristics; Doping profiles; Ionization; Optical scattering; Oscillators; Phonons; Semiconductor diodes; Shape measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17489
