Large-grain polysilicon crystallization enhancement using pulsed RTA

Author

Cheng, C.F. ; Leung, T.C. ; Poon, M.C. ; Chan, Mansun

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

25

Issue

8

fYear

2004

Firstpage

553

Lastpage

555

Abstract

Enhanced metal-induced lateral crystallization (MILC) using a pulsed rapid thermal annealing (PRTA) technique to form a large-grain polysilicon layer has been investigated. By applying high temperature for a short period of time, MILC is enhanced while the background solid phase crystallization is suppressed. Experimental results show that the PRTA method is capable of increasing the rate of directional crystallization and improving the crystal quality of the recrystallized polysilicon layer. The overall annealing time and total thermal budget to achieve similar grain size as in constant temperature annealing is also reduced.

Keywords

amorphous semiconductors; crystal structure; crystallisation; elemental semiconductors; grain size; rapid thermal annealing; silicon; thin film transistors; Si; annealing time; background solid phase crystallization suppression; crystal quality improvement; directional crystallization; grain size; high temperature; large-grain polysilicon crystallization enhancement; large-grain polysilicon layer; metal-induced lateral crystallization; pulsed RTA; pulsed rapid thermal annealing; recrystallized polysilicon layer; thermal budget; thin film transistor; Crystallization; Grain size; Heating; Nickel; Rapid thermal annealing; Rapid thermal processing; Silicon on insulator technology; Solids; Temperature measurement; Thin film transistors; Crystallization; PRTA; TFT; polysilicon; pulsed rapid thermal annealing; thin-film transistor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.831588

Filename

1317023