Title :
DC temperature and field profiles in TRAPATT diode structures
Author_Institution :
Bell-Northern Research Laboratories, Ottawa, Ont., Canada
fDate :
6/1/1972 12:00:00 AM
Abstract :
Temperature and electric field profiles are considered for TRAPATT structures in the nonoscillatory state. Two specific device structures (1 and 6 GHz) are compared and their geometrical limitations on diamond heat sinks are shown to be similar. The effects of space charge and large temperature drops across the active layer are also considered.
Keywords :
Current density; Diodes; Electron traps; Heat sinks; Poisson equations; Radio frequency; Silicon; Space charge; Temperature; Voltage-controlled oscillators;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17491
