DocumentCode
1043216
Title
DC temperature and field profiles in TRAPATT diode structures
Author
Thomson, Ian
Author_Institution
Bell-Northern Research Laboratories, Ottawa, Ont., Canada
Volume
19
Issue
6
fYear
1972
fDate
6/1/1972 12:00:00 AM
Firstpage
757
Lastpage
760
Abstract
Temperature and electric field profiles are considered for TRAPATT structures in the nonoscillatory state. Two specific device structures (1 and 6 GHz) are compared and their geometrical limitations on diamond heat sinks are shown to be similar. The effects of space charge and large temperature drops across the active layer are also considered.
Keywords
Current density; Diodes; Electron traps; Heat sinks; Poisson equations; Radio frequency; Silicon; Space charge; Temperature; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17491
Filename
1476962
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