DocumentCode :
1043216
Title :
DC temperature and field profiles in TRAPATT diode structures
Author :
Thomson, Ian
Author_Institution :
Bell-Northern Research Laboratories, Ottawa, Ont., Canada
Volume :
19
Issue :
6
fYear :
1972
fDate :
6/1/1972 12:00:00 AM
Firstpage :
757
Lastpage :
760
Abstract :
Temperature and electric field profiles are considered for TRAPATT structures in the nonoscillatory state. Two specific device structures (1 and 6 GHz) are compared and their geometrical limitations on diamond heat sinks are shown to be similar. The effects of space charge and large temperature drops across the active layer are also considered.
Keywords :
Current density; Diodes; Electron traps; Heat sinks; Poisson equations; Radio frequency; Silicon; Space charge; Temperature; Voltage-controlled oscillators;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17491
Filename :
1476962
Link To Document :
بازگشت