Title :
10-kV, 123-m/spl Omega//spl middot/cm2 4H-SiC power DMOSFETs
Author :
Sei-Hyung Ryu ; Krishnaswami, S. ; O´Loughlin, M. ; Richmond, J. ; Agarwal, A. ; Palmour, J. ; Hefner, A.R.
Author_Institution :
Cree Inc., Durham, NC, USA
Abstract :
10-kV, 123-m/spl Omega//spl middot/cm2 power DMOSFETs in 4H-SiC are demonstrated. A 42% reduction in R/sub on,sp/, compared to a previously reported value, was achieved by using an 8 × 10/sup 14/ cm/sup -3/ doped, 85-μm-thick drift epilayer. An effective channel mobility of 22 cm2/Vs was measured from a test MOSFET. A specific on-resistance of 123 m/spl Omega//spl middot/cm2 were measured with a gate bias of 18 V, which corresponds to an E/sub ox/ of 3 MV/cm. A leakage current of 197 μA was measured at a drain bias of 10 kV from a 4H-SiC DMOSFET with an active area of 4.24 × 10/sup -3/ cm2. A switching time of 100 ns was measured in 4.6-kV, 1.3-A switching measurements. This shows that the 4H-SiC power DMOSFETS are ideal for high-voltage, high-speed switching applications.
Keywords :
high-speed integrated circuits; power MOSFET; silicon compounds; wide band gap semiconductors; 1.3 A; 10 kV; 100 ns; 18 V; 197 muA; 4.6 kV; 4H-SiC power DMOSFET; SiC; channel mobility; drift epilayer; high voltage switching; high-speed switching; leakage current; power MOSFET; switching time; Aluminum; Implants; Leakage current; MOSFET circuits; Nitrogen; Power MOSFET; Silicon carbide; Testing; Time measurement; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.832122
