Title :
PSG masks for diffusions in gallium arsenide
Author :
Baliga, Jayant B. ; Ghandhi, Sorab K.
Author_Institution :
Rensselaer Polytechnic Institute, Troy, N. Y.
fDate :
6/1/1972 12:00:00 AM
Abstract :
This paper describes the use of phosphosilicate glass (PSG) films as an effective mask against zinc and tin diffusions in gallium arsenide. It is shown that films with a high phosphorus pentoxide content (as much as 30 percent by weight) can be used to obtain adequate crack-free masks against these dopants. Effective masking was obtained for diffusion depths (unmasked regions) up to 10 µ.
Keywords :
Argon; Fabrication; Gallium arsenide; Glass; Oxidation; Silicon compounds; Substrates; Temperature; Tin; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17492
