DocumentCode
1043232
Title
Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility
Author
Yu, D.S. ; Chiang, K.C. ; Cheng, C.F. ; Chin, Albert ; Zhu, Chunxiang ; Li, M.-F. ; Kwong, Dim-Lee
Author_Institution
Nano Sci. Technol. Center, Univ. Syst. of Taiwan, Hsinchu, Taiwan
Volume
25
Issue
8
fYear
2004
Firstpage
559
Lastpage
561
Abstract
We have integrated the low work function NiSi:Hf gate on high-κ LaAlO3 and on smart-cut Ge-on-insulator (SC-GOI) n-MOSFETs. At 1.4-nm equivalent oxide thickness, the NiSi:Hf-LaAlO3/SC-GOI n-MOSFET has comparable gate leakage current with the control Al gate on LaAlO3-Si MOSFETs that is ∼5 orders of magnitude lower than SiO2. In addition, the LaAlO3/SC-GOI n-MOSFET with a metal-like fully NiSi:Hf gate has high peak electron mobility of 398 cm2/Vs and 1.7 times higher than LaAlO3-Si devices.
Keywords
MOSFET; germanium; hafnium; high electron mobility transistors; lanthanum compounds; nickel compounds; semiconductor-insulator boundaries; 1.4 nm; LaAlO3-Si; NiSi:Hf-LaAlO3; control Al gate; gate leakage current; high electron mobility; oxide thickness; peak electron mobility; silicided n-MOSFET; smart-cut Ge-on-insulator; Charge carrier processes; Chemical vapor deposition; Dielectric substrates; Electron mobility; Hafnium; Helium; Leakage current; MOSFET circuits; Plasma devices; Thickness control; $; GOI; Ge-on-insulator; Hf; LaAlO$_; MOSFET; NiSi;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2004.832527
Filename
1317025
Link To Document