Title :
Improved split C-V method for effective mobility extraction in sub-0.1-μm Si MOSFETs
Author :
Romanjek, K. ; Andrieu, F. ; Ernst, T. ; Ghibaudo, G.
Author_Institution :
Inst. of Microelectron., ENSERG/INPG, Grenoble, France
Abstract :
The feasibility of split capacitance-voltage (C-V) measurements in sub-0.1 μm Si MOSFETs is demonstrated. Based on the split C-V measurements, an improved methodology to extract accurately the effective channel length and the effective mobility is proposed. Unlike conventional I/sub d/(V/sub g/)-based extraction techniques, this new approach does not assume the invariance of the effective mobility with gate length (assumption proved to be false in this paper). This method is relevant to study transport limitations in ultimate MOSFETs as illustrated with the study of pocket implant influence on 50-nm p-MOSFETs.
Keywords :
MOSFET; capacitance measurement; carrier mobility; elemental semiconductors; silicon; voltage measurement; 0.1 micron; 50 nm; Si; capacitance measurement; carrier mobility; effective channel length extraction; effective mobility extraction; gate length; p-MOSFET; pocket implant influence; split C-V measurements; split C-V method; split capacitance-voltage; transport limitations; Capacitance measurement; Current measurement; Data mining; Electrical resistance measurement; Implants; Length measurement; MOSFET circuits; Parasitic capacitance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.832786
