DocumentCode
1043346
Title
Effect of aluminum linewidth on the annealing of fast states in MOS structures
Author
Schlegel, Earl S.
Author_Institution
Westinghouse Electric Corporation, Pittsburgh, Pa.
Volume
19
Issue
6
fYear
1972
fDate
6/1/1972 12:00:00 AM
Firstpage
839
Lastpage
840
Abstract
Empirical data are presented showing that the effect of aluminum in the annealing of fast states in MOS structures is dependent on the linewidth of the aluminum. The density of fast states under 0.2-mil-wide aluminum is found to be essentially the same as that in regions not covered by aluminum.
Keywords
Aluminum; Annealing; Crystals; Current density; Electron beams; Nickel; Optical reflection; Strips; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17503
Filename
1476974
Link To Document