Title :
Effect of aluminum linewidth on the annealing of fast states in MOS structures
Author :
Schlegel, Earl S.
Author_Institution :
Westinghouse Electric Corporation, Pittsburgh, Pa.
fDate :
6/1/1972 12:00:00 AM
Abstract :
Empirical data are presented showing that the effect of aluminum in the annealing of fast states in MOS structures is dependent on the linewidth of the aluminum. The density of fast states under 0.2-mil-wide aluminum is found to be essentially the same as that in regions not covered by aluminum.
Keywords :
Aluminum; Annealing; Crystals; Current density; Electron beams; Nickel; Optical reflection; Strips; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17503
