Hybrid and Passive Mode-Locking of a Monolithic Two-Section MQW InGaN/GaN Laser Diode

Author

Olle, Vojtech F. ; Wonfor, Adrian ; Sulmoni, L.A.M. ; Vasilev, Peter P. ; Lamy, J.-M. ; Carlin, Jean-Francois ; Grandjean, Nicolas ; Penty, Richard V. ; White, Ian H.

Author_Institution

Eng. Dept., Univ. of Cambridge, Cambridge, UK

Volume

25

Issue

15

fYear

2013

fDate

Aug.1, 2013

Firstpage

1514

Lastpage

1516

Abstract

We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μmlong absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <;500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser beams; laser mode locking; laser stability; microwave generation; microwave photonics; optical pulse generation; quantum well lasers; wide band gap semiconductors; InGaN-GaN; absorber section; average output power; back facet; continuous stable pulse train; emission wavelength; frequency 28.6 GHz; hybrid mode-locking; laser peak power; microwave linewidth; monolithic two-section MQW laser diode; monolithic two-section multiple quantum well laser diode; passive mode-locking; power 37 mW; power 72 mW; power 9.4 mW; pulse width; size 1.5 mm; size 50 mum; time 4 ps; time 8 ps; wavelength 422 nm; Mode-locked lasers; Semiconductor lasers; Ultrafast lasers; Visible lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2267807

Filename

6531631