• DocumentCode
    1043490
  • Title

    Development of Single-Transistor-Control LDO Based on Flipped Voltage Follower for SoC

  • Author

    Man, Tsz Yin ; Leung, Ka Nang ; Leung, Chi Yat ; Mok, Philip K T ; Chan, Mansun

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
  • Volume
    55
  • Issue
    5
  • fYear
    2008
  • fDate
    6/1/2008 12:00:00 AM
  • Firstpage
    1392
  • Lastpage
    1401
  • Abstract
    The design issues of a single-transistor-control (STC) low-drop-out (LDO) based on flipped voltage follower is discussed in this paper, in particular the feedback stability at different conditions of output capacitors, equivalent series resistances (ESRs) and load current. Based on the analysis, an STC LDO was implemented in a standard 0.35-mum MOS technology. It is proven experimentally that the LDO provides stable voltage regulation at a variety of output-capacitor/ESR conditions and is also stable in no output capacitor condition. The preset output voltage, minimum unregulated input voltage, maximum output current at a dropout voltage of 200 mV, ground current and active chip area are 1 V, 1.2 V, 50 mA, 95 muA, and 140 mum times 320 mum, respectively. The full-load transient response in the no output capacitor case is faster than a micro second and is about 300 ns.
  • Keywords
    MOS integrated circuits; system-on-chip; transient response; voltage regulators; MOS technology; SoC; equivalent series resistances; feedback stability; flipped voltage follower; full-load transient response; load current; output capacitors; single-transistor-control LDO; voltage regulation; Flipped voltage follower; Flipped voltage follower (FVF); LDO; loop gain and power management; low drop out (LDO);
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2008.916568
  • Filename
    4436075