DocumentCode
1043490
Title
Development of Single-Transistor-Control LDO Based on Flipped Voltage Follower for SoC
Author
Man, Tsz Yin ; Leung, Ka Nang ; Leung, Chi Yat ; Mok, Philip K T ; Chan, Mansun
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Volume
55
Issue
5
fYear
2008
fDate
6/1/2008 12:00:00 AM
Firstpage
1392
Lastpage
1401
Abstract
The design issues of a single-transistor-control (STC) low-drop-out (LDO) based on flipped voltage follower is discussed in this paper, in particular the feedback stability at different conditions of output capacitors, equivalent series resistances (ESRs) and load current. Based on the analysis, an STC LDO was implemented in a standard 0.35-mum MOS technology. It is proven experimentally that the LDO provides stable voltage regulation at a variety of output-capacitor/ESR conditions and is also stable in no output capacitor condition. The preset output voltage, minimum unregulated input voltage, maximum output current at a dropout voltage of 200 mV, ground current and active chip area are 1 V, 1.2 V, 50 mA, 95 muA, and 140 mum times 320 mum, respectively. The full-load transient response in the no output capacitor case is faster than a micro second and is about 300 ns.
Keywords
MOS integrated circuits; system-on-chip; transient response; voltage regulators; MOS technology; SoC; equivalent series resistances; feedback stability; flipped voltage follower; full-load transient response; load current; output capacitors; single-transistor-control LDO; voltage regulation; Flipped voltage follower; Flipped voltage follower (FVF); LDO; loop gain and power management; low drop out (LDO);
fLanguage
English
Journal_Title
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher
ieee
ISSN
1549-8328
Type
jour
DOI
10.1109/TCSI.2008.916568
Filename
4436075
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