DocumentCode :
104360
Title :
Mechanisms of the Asymmetric Light Output Enhancements in 
-Plane GaN Light-Emitting Diodes With Photonic Crystals
Author :
Hsiang-Wei Li ; Yu-Feng Yin ; Chen-Yu Chang ; Chen-Hung Tsai ; Yen-Hsiang Hsu ; Da-Wei Lin ; Yuh-Renn Wu ; Hao-Chung Kuo ; Jian Jang Huang
Author_Institution :
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
50
Issue :
12
fYear :
2014
fDate :
Dec. 2014
Firstpage :
951
Lastpage :
956
Abstract :
The unique properties of nonpolar GaN light-emitting diodes (LEDs) have the advantages of generating polarized light emission. The employment of asymmetric 2-D photonic crystals (PhCs) can further enhance the light polarization ratio. In addition, it was generally recognized that the Purcell effect can increase the internal quantum efficiency of the LEDs with PhCs. In this paper, we study the properties of optical modes from different crystal planes. The Purcell effect is analyzed based on the PhCs and material crystal orientations. With different transition probability of the polarized photons in valence bands, the corresponding Purcell effect enhancement on the quantum efficiency varies.
Keywords :
III-V semiconductors; crystal orientation; gallium compounds; light emitting diodes; light polarisation; photonic crystals; valence bands; wide band gap semiconductors; GaN; LED; Purcell effect; a-plane GaN light-emitting diodes; asymmetric 2D photonic crystals; asymmetric light output enhancements; crystal planes; internal quantum efficiency; light polarization ratio; material crystal orientation; nonpolar GaN light-emitting diodes; optical modes; polarized light emission; polarized photons; transition probability; valence bands; Electric fields; Gallium nitride; Light emitting diodes; Optical polarization; Photonic crystals; Spontaneous emission; Light-emitting diodes; Non-polar GaN; Photonic crystal; Purcell effect; non-polar GaN; photonic crystal; purcell effect;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2014.2362552
Filename :
6920002
Link To Document :
