Title :
Electrical characteristics of bulk n-InP oscillators
Author :
Kaul, R. ; Grubin, H.L. ; Ladd, G.O., Jr. ; Berak, J.M.
Author_Institution :
United Aircraft Research Laboratories, East Hartford, Conn.
fDate :
8/1/1972 12:00:00 AM
Abstract :
Prethreshold measurements on long bulk n-InP oscillators with uniform internal electric fields yield values of the threshold electric field for negative differential mobility of 6800±600 V/cm. Individual oscillators have been operated in a circuit-controlled mode and were tuned from 0.25 to 1.0 GHz.
Keywords :
Contacts; Electric variables; Electric variables measurement; Electron mobility; Probes; Schottky diodes; Temperature distribution; Threshold voltage; Tuned circuits; Voltage-controlled oscillators;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17530
