DocumentCode :
1043618
Title :
NDRO thin-film memory device exhibiting triangular hysteresis loop
Author :
Belson, Henry S. ; Desavage, Bernaed F. ; Tebble, Robert S. ; Parker, R.
Author_Institution :
U. S. Naval Ordnance Laboratory, Silver Spring, Md.
Volume :
6
Issue :
3
fYear :
1970
fDate :
9/1/1970 12:00:00 AM
Firstpage :
722
Lastpage :
724
Abstract :
Certain thin Permalloy films which have a basically uniaxial character show square hysteresis loops in both easy and hard direction. The hard-direction coercivity H_{c2} is about half that of the easy direction. If a saturating magnetic field is applied at an angle α, a few degrees from the hard direction, a loop typical of uniaxial films results. Application of a small bias field normal to the drive field results in a triangular loop. This has two stable remanent states, in the first of which the magnetization has been left in a hard-direction low-permeability zero state. The other remanent state has the magnetization in a high permeability, easy direction, the one state. Whether the interrogating pulses of magnitude less than H_{c2} will result in an output pulse or not depends on the state of the device. No destruction of the stored information occurs. It is possible to write into either state by using the coincident current techniques, as long as precautions are taken against creep from the hard direction.
Keywords :
Hysteresis loops; Magnetic film memories; NDRO memories; Permalloy films; Anisotropic magnetoresistance; Coercive force; Extraterrestrial measurements; Magnetic anisotropy; Magnetic fields; Magnetic films; Magnetic hysteresis; Magnetization; Perpendicular magnetic anisotropy; Thin film devices;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1970.1066831
Filename :
1066831
Link To Document :
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