DocumentCode
1043637
Title
Response times of light-emitting diodes
Author
Nakamura, Satoshi ; Umeda, Sun-ichi ; Nakada, Osamu
Author_Institution
Hitachi, Ltd., Tokyo, Japan
Volume
19
Issue
8
fYear
1972
fDate
8/1/1972 12:00:00 AM
Firstpage
995
Lastpage
997
Abstract
Response times of light emission from a GaAs0.6 P0.4 electroluminescent diode have been measured for stepwise applications of voltage. Turn-on times decrease either with an increase of the steady-state level of current or with superposition of a dc bias voltage. The main features of the experiment are in reasonable agreement with those of the calculated curves based on an equivalent circuit with a depletion-layer capacitance and a voltage-dependent diode conductance.
Keywords
Capacitance; Delay; Electroluminescence; Electrons; Equivalent circuits; Gallium arsenide; Light emitting diodes; Semiconductor diodes; Steady-state; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17533
Filename
1477004
Link To Document