مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1043928

Title :

Gunn effect in MESFET-like structures

Author :

Diskus, C.G. ; Lubke, K. ; Lettenmayr, H.W. ; Thim, H.W.

Author_Institution :

Linz Univ., Austria

Volume :

Issue :

fYear :

1992

fDate :

5/21/1992 12:00:00 AM

Firstpage :

980

Lastpage :

981

Abstract :

The performance of planar field-effect controlled transferred electron oscillators with different combinations of layer thickness and doping concentration has been investigated. A negative differential resistance has even been obtained with 0.29 mu m thick 1.6*10¹⁷ cm^-3 n-doped samples. This is the first time a MESFET-like active layer has exhibited the Gunn effect and has successfully been operated as a TEO at 36 GHz.

Keywords :

Gunn oscillators; III-V semiconductors; MMIC; Schottky gate field effect transistors; gallium arsenide; microwave generation; 0.29 micron; 36 GHz; EHF; GaAs; Gunn effect; MESFET-like active layer; MESFET-like structures; TEO; field-effect controlled transferred electron oscillators; millimetre wave generation; negative differential resistance; planar devices;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19920623

Filename :

274673

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1043928