DocumentCode
1043953
Title
Bipolar junction transistors fabricated in silicon-on-sapphire
Author
Garcia, Gaetan
Volume
28
Issue
11
fYear
1992
fDate
5/21/1992 12:00:00 AM
Firstpage
983
Lastpage
985
Abstract
The effects of processing temperature on collector leakage current in bipolar junction transistors (BJTs) fabricated in silicon-on-sapphire (SOS) were examined. At low process temperatures (850 degrees C) a reduction of five orders of magnitude in the collector leakage current was observed. Excellent I-V characteristics were obtained on both NPN and PNP transistors fabricated at lower temperatures. Measured DC current gain beta for the NPN devices was 30, and that of the PNP devices was 40. Additionally, current mode logic (CML) circuits fabricated using these transistors exhibited well behaved DC switching characteristics.
Keywords
bipolar integrated circuits; bipolar transistors; emitter-coupled logic; semiconductor-insulator boundaries; 850 C; CML; DC current gain; DC switching characteristics; I-V characteristics; NPN devices; PNP devices; Si-Al 2O 3; bipolar junction transistors; collector leakage current; complementary bipolar transistors; current mode logic; processing temperature; silicon-on-sapphire; vertical bipolar transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920625
Filename
274675
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