Title :
Very narrow-linewidth (70 kHz) 1.55 mu m strained MQW DFB lasers
Author :
Bissessur, H. ; Starck, C. ; Emery, J.-Y. ; Pommereau, Franck ; Duchemin, C. ; Provost, J.-G. ; Fernier, B.
fDate :
5/21/1992 12:00:00 AM
Abstract :
A linewidth as narrow as 70 kHz together with a linewidth-power product of 0.2 MHz.mW have been achieved on 1450 mu m long compressively strained quantum well uniform DFB lasers. The results are achieved through a reduction of the phase-amplitude coupling factor, which is measured to be 1.7 times lower than in unstrained devices.
Keywords :
chemical beam epitaxial growth; distributed feedback lasers; semiconductor junction lasers; semiconductor quantum wells; 1.55 micron; 1450 micron; 70 kHz; compressively strained; linewidth-power product; narrow linewidth lasers; phase-amplitude coupling factor; strained MQW DFB lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920634
