DocumentCode
1044082
Title
Admittance of a forward-biased P-N+junction diode
Author
Gokhale, B.V.
Author_Institution
IBM East Fishkill Facility, Hopewell Junction, N. Y.
Volume
19
Issue
11
fYear
1972
fDate
11/1/1972 12:00:00 AM
Firstpage
1215
Lastpage
1219
Abstract
Numerical solutions of the basic semiconductor transport equations are used to analyze the ac behavior of a forward-biased diode.
Keywords
Admittance; Capacitance; Charge carrier processes; Equations; Frequency dependence; P-n junctions; Radiative recombination; Semiconductor diodes; Spontaneous emission; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17576
Filename
1477047
Link To Document