• DocumentCode
    1044082
  • Title

    Admittance of a forward-biased P-N+junction diode

  • Author

    Gokhale, B.V.

  • Author_Institution
    IBM East Fishkill Facility, Hopewell Junction, N. Y.
  • Volume
    19
  • Issue
    11
  • fYear
    1972
  • fDate
    11/1/1972 12:00:00 AM
  • Firstpage
    1215
  • Lastpage
    1219
  • Abstract
    Numerical solutions of the basic semiconductor transport equations are used to analyze the ac behavior of a forward-biased diode.
  • Keywords
    Admittance; Capacitance; Charge carrier processes; Equations; Frequency dependence; P-n junctions; Radiative recombination; Semiconductor diodes; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1972.17576
  • Filename
    1477047