Author :
Thiede, A. ; Berroth, Manfred ; Hurm, V. ; Nowotny, U. ; Gotzeina, W. ; Sedler, M. ; Raynor, B. ; Koehler, Katrina ; Hofmann, P. ; Huelsmann, A. ; Kaufel, G. ; Schneider, Jurgen
Keywords :
III-V semiconductors; aluminium compounds; application specific integrated circuits; field effect integrated circuits; gallium arsenide; large scale integration; logic arrays; multiplying circuits; 0.3 micron; 16 bit; 7.2 ns; AlGaAs-GaAs; LSI; design; gate array; gate length; multiplication time; parallel multiplier; performance; quantum well transistors; semiconductors; semicustom IC;