DocumentCode :
1044235
Title :
Characterization of thin-oxide MNOS memory transistors
Author :
White, Marvin H. ; Cricchi, J. Ronald
Author_Institution :
Westinghouse Electric Corporation, Baltimore, Md.
Volume :
19
Issue :
12
fYear :
1972
fDate :
12/1/1972 12:00:00 AM
Firstpage :
1280
Lastpage :
1288
Abstract :
A direct tunneling theory is formulated and applied to high-speed thin-oxide complementary metal-nitride-oxide-silicon (MNOS) memory transistors. Charge transport in the erase/write mode of operation is interpreted in terms of the device threshold voltage shift. The threshold voltage shift in the erase/write mode is related to the amplitude and time duration of the applied gate voltage over the full range of switching times. MNOS memory devices ( 
) exhibit a 
V for an erase/write 
ns, which corresponds to an initial oxide field strength 
V/cm. The direct tunneling theory is applied to the charge retention or memory mode in which charge is transported to and from the Si-SiO2 interface states. The rate of charge loss to interface states is influenced by electrical stress which alters the interface state characteristics. We discuss the fabrication of complementary high-speed MNOS memory transistors and the experimental test procedures to measure charge transport and storage in these devices.
) exhibit a V for an erase/write ns, which corresponds to an initial oxide field strength V/cm. The direct tunneling theory is applied to the charge retention or memory mode in which charge is transported to and from the Si-SiOKeywords :
Charge measurement; Current measurement; Electron traps; Fabrication; Interface states; Silicon; Stress; Testing; Threshold voltage; Tunneling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17591
Filename :
1477062
Link To Document :
