Title :
FET memory systems
Author_Institution :
Thomas J. Watson Research Center, IBM Corporation, Yorktown Heights, NY, USA
fDate :
9/1/1970 12:00:00 AM
Abstract :
The metal-oxide-semiconductor field-effect transistor (MOSFET) is finding widespread application as a technology for memory systems, due both to advantageous device and technology characteristics, and to the unique requirements of the memory environment. The technology has proven quite versatile, and among the applications are random access systems, shift registers, and read-only storage. Both complementary and noncomplementary technologies have been used. The backgrounud and philosophy of using MOSFETs as a memory technology are reviewed, and the recent developments, trends, and the current state of the art are summarized.
Keywords :
Semiconductor memories; Costs; Decoding; Delay; FETs; Logic circuits; Logic devices; MOSFET circuits; Semiconductor memory; Shift registers; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1970.1066888