DocumentCode :
1044251
Title :
FET memory systems
Author :
Terman, L.M.
Author_Institution :
Thomas J. Watson Research Center, IBM Corporation, Yorktown Heights, NY, USA
Volume :
6
Issue :
3
fYear :
1970
fDate :
9/1/1970 12:00:00 AM
Firstpage :
584
Lastpage :
589
Abstract :
The metal-oxide-semiconductor field-effect transistor (MOSFET) is finding widespread application as a technology for memory systems, due both to advantageous device and technology characteristics, and to the unique requirements of the memory environment. The technology has proven quite versatile, and among the applications are random access systems, shift registers, and read-only storage. Both complementary and noncomplementary technologies have been used. The backgrounud and philosophy of using MOSFETs as a memory technology are reviewed, and the recent developments, trends, and the current state of the art are summarized.
Keywords :
Semiconductor memories; Costs; Decoding; Delay; FETs; Logic circuits; Logic devices; MOSFET circuits; Semiconductor memory; Shift registers; Voltage;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1970.1066888
Filename :
1066888
Link To Document :
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