Title :
A high-frequency variable delay line
Author_Institution :
General Motors Corporation, Warren, Mich.
fDate :
12/1/1972 12:00:00 AM
Abstract :
A short highly variable VHF delay line is described, in which variability is achieved by changing the primary volume of electric field energy storage. It is fabricated using well-established planar integrated-circuit techniques.
Keywords :
Chebyshev approximation; Delay lines; Diodes; Electrons; Equations; Insulation; Metal-insulator structures; Microstrip; Propagation constant; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17593