Title :
Room temperature operation of electrically pumped surface-emitting circular grating DBR laser
Author :
Wu, Chunlin ; Svilans, M. ; Fallahi, Mahmoud ; Templeton, I. ; Makino, Tatsuya ; Glinski, J. ; Maciejko, R. ; Najafi, S.I. ; Maritan, C. ; Blaauw, C. ; Knight, Gordon
Author_Institution :
Adv. Technol. Lab., Bell-Northern Res., Ottawa, Ont., Canada
fDate :
5/21/1992 12:00:00 AM
Abstract :
The first 1.3 mu m electrically-pumped surface-emitting circular grating DBR laser operating at room temperature in a GaInAsP/InP heterostructure is reported. The threshold current was 170 mA. The surface-emitted output power was 10 mW.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.3 micron; 10 mW; 170 mA; GaInAsP-InP heterostructure; electrically pumped surface-emitting circular grating DBR laser; room temperature operation; surface-emitted output power; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920658
