Title :
High speed ultralow chirp 1.55 mu m MBE grown GaInAs/AlGaInAs MQW DFB lasers
Author :
Blez, M. ; Kazmierski, C. ; Mathoorasing, D. ; Quillec, M. ; Gilleron, M. ; Nakajima, Hiromasa ; Sermage, B.
Author_Institution :
CNET, Bagneux, France
fDate :
5/21/1992 12:00:00 AM
Abstract :
The successful realisation of high speed MBE grown InGaAs/InGaAlAs MQW active layer DFB BRS lasers is reported, with threshold currents as low as 9.5 mA, and bandwidths up to 9 GHz. The devices operate at 10 Gbit/s, with a chirp value lower than 0.1 nm; a very small alpha parameter value of 1.8 was measured above threshold.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor junction lasers; 1.55 micron; 10 Gbit/s; 9 GHz; 9.5 mA; GaInAs-AlGaInAs; MBE; MQW active layer DFB BRS lasers; alpha parameter; bandwidths; threshold currents; ultralow chirp;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920660
