Computer analysis on the static negative resistance due to the geometrical effect of a GaAs bulk element

Results of computer analysis on the static negative resistance of a GaAs bulk element with a geometrical effect are presented. It is shown that a static negative resistance appears across an overcritically doped GaAs element with a geometry of expanding cross section toward the anode as a result of the development of a stationary high-field domain at the expanding part of the element. These results are in good agreement with the reported experimental results.