• DocumentCode
    1044344
  • Title

    The RCI model—A general model for semiconductor devices

  • Author

    Arendt, Armin

  • Author_Institution
    Siemens AG, Munich Germany
  • Volume
    20
  • Issue
    1
  • fYear
    1973
  • fDate
    1/1/1973 12:00:00 AM
  • Firstpage
    5
  • Lastpage
    12
  • Abstract
    The RCI model is an electric network consisting of lumped resistors, capacitors, and controlled current sources. It simulates the three-dimensional time-dependent transport and continuity equations and the Poisson equation for nondegenerated semiconductors without additional restriction except the spatial discretization error. Therefore, the model is suitable to describe the steady-state solution as well as the small- and large-signal transient behavior of semiconductor devices. The disadvantages of the Linvill model and the Ohtsuki-Kani model have been avoided by introducing excess variables and new model potentials. For constant mobility, the passive components of the network become linear. All nonlinearities are focused on the voltage-controlled current sources that have simple transfer functions.
  • Keywords
    Circuit analysis; Circuit simulation; Conductors; Electron devices; Equivalent circuits; Gunn devices; Nonlinear circuits; Poisson equations; Semiconductor devices; Semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17601
  • Filename
    1477258