Title :
The RCI model—A general model for semiconductor devices
Author_Institution :
Siemens AG, Munich Germany
fDate :
1/1/1973 12:00:00 AM
Abstract :
The RCI model is an electric network consisting of lumped resistors, capacitors, and controlled current sources. It simulates the three-dimensional time-dependent transport and continuity equations and the Poisson equation for nondegenerated semiconductors without additional restriction except the spatial discretization error. Therefore, the model is suitable to describe the steady-state solution as well as the small- and large-signal transient behavior of semiconductor devices. The disadvantages of the Linvill model and the Ohtsuki-Kani model have been avoided by introducing excess variables and new model potentials. For constant mobility, the passive components of the network become linear. All nonlinearities are focused on the voltage-controlled current sources that have simple transfer functions.
Keywords :
Circuit analysis; Circuit simulation; Conductors; Electron devices; Equivalent circuits; Gunn devices; Nonlinear circuits; Poisson equations; Semiconductor devices; Semiconductor diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17601