DocumentCode
1044354
Title
Intrinsic FM noise of Gunn oscillators
Author
Ataman, Atilla ; Harth, Wolfgang
Author_Institution
Technische Universität Braunschweig, Braunschweig, Germany
Volume
20
Issue
1
fYear
1973
fDate
1/1/1973 12:00:00 AM
Firstpage
12
Lastpage
14
Abstract
It has been experimentally shown that the product of the mean frequency deviation of FM noise and the external quality factor varies inversely proportional to the power output of Gunn oscillators. This behavior of FM noise of Gunn oscillators with power output is in very good agreement with theoretical predictions of large-signal diffusion noise in GaAs devices. At optimum power output, the calculated and experimentally determined noise measure ranges between 17 and 22 dB.
Keywords
Active noise reduction; Diodes; Electrons; Frequency conversion; Frequency modulation; Gallium arsenide; Gunn devices; Noise measurement; Oscillators; Power measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17602
Filename
1477259
Link To Document