Title :
Intrinsic FM noise of Gunn oscillators
Author :
Ataman, Atilla ; Harth, Wolfgang
Author_Institution :
Technische Universität Braunschweig, Braunschweig, Germany
fDate :
1/1/1973 12:00:00 AM
Abstract :
It has been experimentally shown that the product of the mean frequency deviation of FM noise and the external quality factor varies inversely proportional to the power output of Gunn oscillators. This behavior of FM noise of Gunn oscillators with power output is in very good agreement with theoretical predictions of large-signal diffusion noise in GaAs devices. At optimum power output, the calculated and experimentally determined noise measure ranges between 17 and 22 dB.
Keywords :
Active noise reduction; Diodes; Electrons; Frequency conversion; Frequency modulation; Gallium arsenide; Gunn devices; Noise measurement; Oscillators; Power measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17602
