Title :
Two-segment multiquantum well lasers with 7 nm tuning range and narrow linewidth
Author :
Eddolls, D.V. ; Vass, S.J. ; Ash, R.M. ; Park, C.A.
Author_Institution :
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
fDate :
5/21/1992 12:00:00 AM
Abstract :
Two-segment MOVPE multiquantum well lasers of 500 mu m total length have demonstrated continuous current tuning over ranges up to 7.2 nm with minimum linewidths of less than 3 MHz. These results are explained in terms of reduced modal instability through improved wafer uniformity compared with LPE material.
Keywords :
frequency modulation; laser tuning; optical communication equipment; optical modulation; semiconductor junction lasers; spectral line breadth; vapour phase epitaxial growth; 500 micron; FM response; FSK systems; MOVPE; modal instability-reduction; multiquantum well; narrow linewidth; semiconductor lasers; tunable sources; tuning range; two-segment MQW lasers; wafer uniformity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920669
