DocumentCode
1044474
Title
Thermomagnetic writing in GdIG
Author
Doyle, William D. ; Goldberg, Gerald K. ; Flannery, William E.
Author_Institution
UNIVAC Division, Sperry Rand Corporation, Philadelphia, Pa
Volume
6
Issue
3
fYear
1970
fDate
9/1/1970 12:00:00 AM
Firstpage
548
Lastpage
553
Abstract
A model for thermomagnetic writing in a GdlG platelet held at its compensation temperature is developed and confirming experimental data are presented. It is postulated that magnetization reversal occurs by domain nucleation and expansion. The relationship between the applied field
, the final bit diameter
, and the absorbed energy
is shown to be
where
is a normalization constant, ρ the density,
the specific heat, ω the sample thickness, α a constant relating the magnetization and the temperature, Ec the domain-wall coercive pressure, and σω is the wall energy per unit area. Domains with
are unstable and collapse when the sample returns to the compensation temperature. Measurements are reported of the dependence of
on
for several values of Ptau for a 13-μm thick platelet of aluminum doped GdIG. The quantitative agreement between theory and experiment is good. Observations of domain switching during the heat pulse application confirm all the major features of the model. The results show that in thick and low coercive force platelets, an excessive amount of power is required to write at moderate fields and the bit density is limited by the instability for
. Typical values are
mW,
s,
Oe, and
m. In thin and high coercive force films it should be possible to write 10-μm size bits with a field of < 100 Oe and a power level of 10 mW absorbed in 1 μs
, the final bit diameter
, and the absorbed energy
is shown to be
where
is a normalization constant, ρ the density,
the specific heat, ω the sample thickness, α a constant relating the magnetization and the temperature, E
are unstable and collapse when the sample returns to the compensation temperature. Measurements are reported of the dependence of
on
for several values of P
. Typical values are
mW,
s,
Oe, and
m. In thin and high coercive force films it should be possible to write 10-μm size bits with a field of < 100 Oe and a power level of 10 mW absorbed in 1 μsKeywords
GdIG films; GdIGs; Magnetooptic memories; Aluminum; Coercive force; Iron; Magnetization reversal; Magnetooptic effects; Marine vehicles; Temperature measurement; Temperature sensors; Thickness measurement; Writing;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1970.1066906
Filename
1066906
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