• DocumentCode
    1044493
  • Title

    Novel In0.41Ga0.59As/In0.53Ga0.47As strained emitter heterojunction bipolar transistor grown by molecular beam epitaxy

  • Author

    Huang, C.C. ; Lin, Huang-Hsuan

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    28
  • Issue
    11
  • fYear
    1992
  • fDate
    5/21/1992 12:00:00 AM
  • Firstpage
    1039
  • Lastpage
    1040
  • Abstract
    The first InxGa1-xAs/In0.53Ga0.47As strained emitter heterojunction bipolar transistor (SEHBT), with x=0.41, grown by molecular beam epitaxy on n+-InP substrate are reported. A small signal current gain of 480 and a small offset voltage of 56 mV were obtained. These good results were achieved with a thin emitter layer of 360 AA.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; 56 mV; In 0.41Ga 0.59As-In 0.53Ga 0.47As; InP substrate; molecular beam epitaxy; offset voltage; small signal current gain; strained emitter heterojunction bipolar transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920659
  • Filename
    274728
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044493