DocumentCode :
1044493
Title :
Novel In0.41Ga0.59As/In0.53Ga0.47As strained emitter heterojunction bipolar transistor grown by molecular beam epitaxy
Author :
Huang, C.C. ; Lin, Huang-Hsuan
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
28
Issue :
11
fYear :
1992
fDate :
5/21/1992 12:00:00 AM
Firstpage :
1039
Lastpage :
1040
Abstract :
The first InxGa1-xAs/In0.53Ga0.47As strained emitter heterojunction bipolar transistor (SEHBT), with x=0.41, grown by molecular beam epitaxy on n+-InP substrate are reported. A small signal current gain of 480 and a small offset voltage of 56 mV were obtained. These good results were achieved with a thin emitter layer of 360 AA.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; 56 mV; In 0.41Ga 0.59As-In 0.53Ga 0.47As; InP substrate; molecular beam epitaxy; offset voltage; small signal current gain; strained emitter heterojunction bipolar transistor;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920659
Filename :
274728
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1044493
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