Title :
Annealing with Ni for ohmic contact formation on ICP-etched p-GaN
Author :
Hu, C.-Y. ; Ao, J.-P. ; Okada, M. ; Ohno, Y.
Author_Institution :
Univ. of Tokushima, Tokushima
Abstract :
The effects of annealing with Ni films on ohmic contacts to ICP-etched p-GaN have been investigated. ICP-etched p-GaN samples were annealed with Ni films on the surface. Ni/Au ohmic contacts were realised on these samples after removing the Ni film. The specific contact resistance, as low as 0.492 Omegacm2 , was obtained at 525degC in oxygen ambient. This has been the lowest value reported so far without regrowth process.
Keywords :
III-V semiconductors; annealing; etching; gold alloys; metallisation; nickel alloys; ohmic contacts; wide band gap semiconductors; GaN; ICP-etched; Ni-Au; annealing; ohmic contact formation; temperature 525 C;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082907
