• DocumentCode
    1044498
  • Title

    Annealing with Ni for ohmic contact formation on ICP-etched p-GaN

  • Author

    Hu, C.-Y. ; Ao, J.-P. ; Okada, M. ; Ohno, Y.

  • Author_Institution
    Univ. of Tokushima, Tokushima
  • Volume
    44
  • Issue
    2
  • fYear
    2008
  • Firstpage
    155
  • Lastpage
    156
  • Abstract
    The effects of annealing with Ni films on ohmic contacts to ICP-etched p-GaN have been investigated. ICP-etched p-GaN samples were annealed with Ni films on the surface. Ni/Au ohmic contacts were realised on these samples after removing the Ni film. The specific contact resistance, as low as 0.492 Omegacm2 , was obtained at 525degC in oxygen ambient. This has been the lowest value reported so far without regrowth process.
  • Keywords
    III-V semiconductors; annealing; etching; gold alloys; metallisation; nickel alloys; ohmic contacts; wide band gap semiconductors; GaN; ICP-etched; Ni-Au; annealing; ohmic contact formation; temperature 525 C;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20082907
  • Filename
    4436173
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044498