Reliable high-power (40 mW) operation of transverse-mode stabilised InGaAlP laser diodes with strained active layer

Author

Nitta, Katsumi ; Okajima, M. ; Nishikawa, Yoshihiro ; Itaya, Kazuhiko ; Hatakoshi, G.

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

28

Issue

11

fYear

1992

fDate

5/21/1992 12:00:00 AM

Firstpage

1069

Lastpage

1070

Abstract

Reliable high-power operation of transverse-mode stabilised InGaAlP laser diodes has been achieved by using a selectively-buried-ridge waveguide structure with a very thin (150 AA) active layer. A strained In_0.62Ga_0.38P active layer and a 800 mu m cavity length were employed to reduce the operation current density at high-power and high-temperature operation. A highly reliable operation for over 2000 h has been achieved with a 40 mW output at 40 degrees C. The lifetime of the lasers was limited by the operation current density.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; laser cavity resonators; laser modes; optical waveguides; reliability; semiconductor junction lasers; 150 AA; 2000 hr; 40 degC; 40 mW; 800 micron; In_0.62Ga_0.38P active layer; InGaAlP; cavity length; high-power operation; high-temperature operation; laser diodes; operation current density; reliable operation; selectively-buried-ridge waveguide; semiconductor lasers; strained active layer; thin active layer; transverse-mode stabilised;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19920677

Filename

274730