Impact of correlated generation of oxide defects on SILC and breakdown distributions

Author

Ielmini, Daniele ; Spinelli, Alessandro S. ; Lacaita, Andrea L. ; Van Duuren, Michiel J.

Author_Institution

Dipt. di Elettronica e Informazione, Politecnico di Milano, Milan, Italy

Volume

51

Issue

8

fYear

2004

Firstpage

1281

Lastpage

1287

Abstract

A three-dimensional Monte Carlo model for analysis of the reliability of flash memory arrays is developed, and applied to thin tunnel oxide (t_ox = 5 nm) samples. Good agreement between experimental data and simulation results are obtained, assuming a correlated defect generation in the tunnel oxide of our samples as evidenced in (Ielmini et al., 2004). The impact of correlated defect generation on dielectric breakdown is also addressed by means of a percolation model. It is shown that correlated generation provides no significant degradation of the breakdown lifetime with respect to Poisson statistics.

Keywords

Monte Carlo methods; Poisson distribution; electric breakdown; flash memories; leakage currents; reliability; 5 nm; Flash memory arrays; Monte Carlo model; Poisson statistics; SILC; breakdown distributions; breakdown lifetime; correlated defect generation; correlated generation impact; dielectric breakdown; oxide defects; percolation model; reliability analysis; reliability modeling; stress induced leakage currents; thin tunnel oxide; Degradation; Dielectric breakdown; Electric breakdown; Flash memory; Leakage current; Monte Carlo methods; Probability; Statistical distributions; Statistics; Tunneling; Dielectric breakdown; Flash memories; leakage currents; reliability modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.831959

Filename

1317150