Title :
Discrete-time simulation model for 1/f noise
Author :
Narasimha, Rajesh ; Bandi, SriPriya ; Rao, Raghuveer M. ; Mukund, P.R.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper proposes a simulation model based on the fact that 1/f processes belong to the class of statistically self-similar random processes. Unlike most of the earlier modeling approaches, which were confined to the spectral domain, the model generates 1/f noise in the time domain with a simple white noise input and is parameterized by a quantity whose value can be adjusted to reflect the desired slope of the 1/f spectrum. To verify the fit between the model and actual 1/f noise measurements, experiments were conducted with a p-i-n photodiode at various bias conditions and sampling frequencies.
Keywords :
1/f noise; p-i-n photodiodes; random processes; semiconductor device models; semiconductor device noise; time-domain analysis; white noise; 1/f noise; bias conditions; discrete-time simulation model; p-i-n photodiode; sampling frequency; spectral domain; statistically self-similar random process; time domain; white noise; Autocorrelation; Frequency; Nonlinear filters; Random processes; Spectral analysis; Transfer functions; White noise; $1/f$ noise; device modeling; p-i-n photodiode; simulation model; time domain;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.831957