• DocumentCode
    1044645
  • Title

    Discrete-time simulation model for 1/f noise

  • Author

    Narasimha, Rajesh ; Bandi, SriPriya ; Rao, Raghuveer M. ; Mukund, P.R.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    51
  • Issue
    8
  • fYear
    2004
  • Firstpage
    1340
  • Lastpage
    1343
  • Abstract
    This paper proposes a simulation model based on the fact that 1/f processes belong to the class of statistically self-similar random processes. Unlike most of the earlier modeling approaches, which were confined to the spectral domain, the model generates 1/f noise in the time domain with a simple white noise input and is parameterized by a quantity whose value can be adjusted to reflect the desired slope of the 1/f spectrum. To verify the fit between the model and actual 1/f noise measurements, experiments were conducted with a p-i-n photodiode at various bias conditions and sampling frequencies.
  • Keywords
    1/f noise; p-i-n photodiodes; random processes; semiconductor device models; semiconductor device noise; time-domain analysis; white noise; 1/f noise; bias conditions; discrete-time simulation model; p-i-n photodiode; sampling frequency; spectral domain; statistically self-similar random process; time domain; white noise; Autocorrelation; Frequency; Nonlinear filters; Random processes; Spectral analysis; Transfer functions; White noise; $1/f$ noise; device modeling; p-i-n photodiode; simulation model; time domain;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2004.831957
  • Filename
    1317158