Title :
Visible (660 nm) resonant cavity light-emitting diodes
Author :
Lott, James A. ; Schneider, R.P. ; Vawter, G. Allen ; Zolper, J.C. ; Malloy, K.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
The demonstration of the first visible resonant cavity light-emitting diodes (RCLEDs) is reported. The devices consist of an InAlGaP strained quantum well active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Linewidths from 0.9 mm (2.6 meV) to 45 nm (12.8 meV) were obtained by varying the cavity factor (Q).
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; 660 nm; III-V semiconductors; InAlGaP-AlAs-AlGaAs; RCLEDs; cavity factor; distributed Bragg reflectors; linewidths; resonant cavity light-emitting diodes; strained quantum well active region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930222
