Title :
Depletion-mode IGFET made by deep ion implantation
Author :
Edwards, John R. ; Marr, G. ; Marr, George
Author_Institution :
Bell Telephone Laboratories, Inc., Allentown, Pa.
fDate :
3/1/1973 12:00:00 AM
Abstract :
p-channel depletion-mode IGFET´s for use as depletion-load elements have been fabricated on
Keywords :
Boron; Circuits; Dielectrics; Equations; Fabrication; Impurities; Insulation; Ion implantation; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17641
