• DocumentCode
    1044782
  • Title

    Depletion-mode IGFET made by deep ion implantation

  • Author

    Edwards, John R. ; Marr, G. ; Marr, George

  • Author_Institution
    Bell Telephone Laboratories, Inc., Allentown, Pa.
  • Volume
    20
  • Issue
    3
  • fYear
    1973
  • fDate
    3/1/1973 12:00:00 AM
  • Firstpage
    283
  • Lastpage
    289
  • Abstract
    p-channel depletion-mode IGFET´s for use as depletion-load elements have been fabricated on
  • Keywords
    Boron; Circuits; Dielectrics; Equations; Fabrication; Impurities; Insulation; Ion implantation; Silicon; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17641
  • Filename
    1477298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044782