• DocumentCode
    1044798
  • Title

    35 GHz fmax InP JFET grown by non-hydride MOCVD

  • Author

    Hashemi, Mahmood ; Shealy, James B. ; DenBaars, Steven P. ; Mishra, Umesh K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    29
  • Issue
    4
  • fYear
    1993
  • Firstpage
    372
  • Lastpage
    373
  • Abstract
    High performance InP JFETs were fabricated for the first time by MOCVD using tertiary-butyl phosphine (TBP) as the alternative for the phosphine source. Devices within a gate length of 1 mu m showed very high transconductance of 130 mS/mm, gate-drain breakdown voltage exceeding 20 V, current density of >450 mA/mm with record high fT and fmax of 15 and 35 GHz, respectively.
  • Keywords
    III-V semiconductors; indium compounds; junction gate field effect transistors; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 1 micron; 130 mS; 15 GHz; 20 V; 35 GHz; InP; JFET; MOCVD; TBP; fabrication; nonhydride metal-organic CVD; tertiary-butyl phosphine;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930250
  • Filename
    274782
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044798